Metalgate相关论文
Low Plasma Induced Damaged Neutral Beam Etching of Metal Gate in Metal Gate/High-k Dielectric CMOSFE
As the critical dimension (CD) of the metal-oxide-semiconductor field effect transistor (MOSFET) is scaled down to 45nm ......
Evaluation of Performance and Reliability of p-type Metal-Oxide-Semiconductor Field Effect Transisto
The scaling down of metal-oxide-semiconductor field effect transistors (MOSFETs) through successful gate-last integratio......
